Browsing by Author "Dobrosavljević, Vladimir"

Now showing 1 - 4 of 4
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    Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells
    Shashkin, Alexander A.; Melnikov, Mikhail; Dolgopolov, Valeri; Radonjić, Miloš; Dobrosavljević, Vladimir; Huang, S.; Liu, Chi-Wu; Zhu, Amy Y. X.; Kravchenko, Sergey
    We observe that in a strongly interacting two-dimensional electron system in ultraclean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.
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    Mott domain walls: A (strongly) non-Fermi liquid state of matter
    Tsung-Han, Lee; Vučičević, Jakša; Tanasković, Darko; Miranda, Eduardo; Dobrosavljević, Vladimir
    Most Mott systems display a low-temperature phase coexistence region around the metal-insulator transition. The domain walls separating the respective phases have very recently been observed displaying unusual properties both in simulations and in experiments. First, they often cover a significant volume fraction, thus cannot be neglected. Second, they resemble neither a typical metal nor a standard insulator, displaying unfamiliar temperature dependence of (local) transport properties. Here we take a closer look at such domain wall matter by examining an appropriate unstable solution of the Hubbard model. We show that transport in this regime is dominated by the emergence of “resilient quasiparticles” displaying strong non-Fermi liquid features, reflecting the quantum-critical fluctuations in the vicinity of the Mott point.
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    Mott domain walls: A (strongly) non-Fermi liquid state of matter
    Lee, Tsung-Han; Vučičević, Jakša; Tanasković, Darko; Miranda, E.; Dobrosavljević, Vladimir
    Most Mott systems display a low-temperature phase coexistence region around the metal-insulator transition. The domain walls separating the respective phases have very recently been observed displaying unusual properties both in simulations and in experiments. First, they often cover a significant volume fraction, thus cannot be neglected. Second, they resemble neither a typical metal nor a standard insulator, displaying unfamiliar temperature dependence of (local) transport properties. Here we take a closer look at such domain wall matter by examining an appropriate unstable solution of the Hubbard model. We show that transport in this regime is dominated by the emergence of "resilient quasiparticles"displaying strong non-Fermi liquid features, reflecting the quantum-critical fluctuations in the vicinity of the Mott point.
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    Quantum critical scaling for finite-temperature Mott-like metal-insulator crossover in few-layered MoS2
    Moon, Byoung Hee; Han, Gang Hee; Radonjić, Miloš; Ji, Hyunjin; Dobrosavljević, Vladimir
    The dominant role of strong electron-electron interactions in driving two-dimensional metal-insulator transitions has long been debated, but its clear experimental demonstration is still not available. Here, we examine the finite-temperature transport behavior of few-layered MoS2 material in the vicinity of the density-driven metal-insulator transition, revealing previously overlooked universal features characteristic of strongly correlated electron systems. Our scaling analysis, based on the Wigner-Mott theoretical viewpoint, conclusively demonstrates that the transition is driven by strong electron-electron interactions and not disorder, in striking resemblance to what is seen in other Mott systems. Our results provide compelling evidence that transition-metal dichalcogenides provide an ideal testing ground, and should open an exciting avenue for the study of strong correlation physics.