Browsing by Author "Zhu, Amy Y. X."

Now showing 1 - 2 of 2
  • No Thumbnail Available
    Item
    Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells
    Shashkin, Alexander A.; Melnikov, Mikhail; Dolgopolov, Valeri; Radonjić, Miloš; Dobrosavljević, Vladimir; Huang, S.; Liu, Chi-Wu; Zhu, Amy Y. X.; Kravchenko, Sergey
    We observe that in a strongly interacting two-dimensional electron system in ultraclean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.
  • Thumbnail Image
    Item
    Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system
    Shashkin, A. A.; Melnikov, M. Yu.; Dolgopolov, V. T.; Radonjić, M. M.; Dobrosavljević, V; Huang, S.-H.; Liu, C. W.; Zhu, Amy Y. X.; Kravchenko, S. V.
    The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature T-max, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value T-max decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of T-max cannot be described by existing theories. The results indicate the spin-related origin of the effect.