Electrical control of a spin qubit in InSb nanowire quantum dots: Strongly suppressed spin relaxation in high magnetic field

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dc.citation.issue15
dc.citation.rankM21
dc.citation.spage155307
dc.citation.volume101
dc.contributor.authorMiladić, Suzana
dc.contributor.authorStipsić, Pavle
dc.contributor.authorDobardžić, Edib
dc.contributor.authorMilivojević, Marko
dc.date.accessioned2024-06-18T08:27:16Z
dc.date.available2024-06-18T08:27:16Z
dc.date.issued2020-04-22
dc.description.abstractIn this paper we investigate the impact of gating potential and magnetic field on phonon induced spin relaxation rate and the speed of the electrically driven single-qubit operations inside the InSb nanowire spin qubit. We show that a strong g factor and high magnetic field strength lead to the prevailing influence of electron-phonon scattering due to deformation potential, considered irrelevant for materials with a weak g factor, like GaAs or Si/SiGe. In this regime we find that spin relaxation between qubit states is significantly suppressed due to the confinement perpendicular to the nanowire axis. We also find that maximization of the number of single-qubit operations that can be performed during the lifetime of the spin qubit requres single quantum dot gating potential.
dc.identifier.doi10.1103/physrevb.101.155307
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.scopus2-s2.0-85084407959
dc.identifier.urihttps://pub.ipb.ac.rs/handle/123456789/114
dc.identifier.wos000527498000004
dc.language.isoen
dc.publisherAmerican Physical Society (APS)
dc.relation.ispartofPhysical Review B
dc.relation.ispartofabbrPhys. Rev. B
dc.rightsrestrictedAccess
dc.titleElectrical control of a spin qubit in InSb nanowire quantum dots: Strongly suppressed spin relaxation in high magnetic field
dc.typeArticle
dc.type.versionpublishedVersion
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