Quantum critical scaling for finite-temperature Mott-like metal-insulator crossover in few-layered MoS2
dc.citation.issue | 24 | |
dc.citation.rank | M21 | |
dc.citation.spage | 245424 | |
dc.citation.volume | 102 | |
dc.contributor.author | Moon, Byoung Hee | |
dc.contributor.author | Han, Gang Hee | |
dc.contributor.author | Radonjić, Miloš | |
dc.contributor.author | Ji, Hyunjin | |
dc.contributor.author | Dobrosavljević, Vladimir | |
dc.date.accessioned | 2024-06-14T13:51:53Z | |
dc.date.available | 2024-06-14T13:51:53Z | |
dc.date.issued | 2020-12-24 | |
dc.description.abstract | The dominant role of strong electron-electron interactions in driving two-dimensional metal-insulator transitions has long been debated, but its clear experimental demonstration is still not available. Here, we examine the finite-temperature transport behavior of few-layered MoS2 material in the vicinity of the density-driven metal-insulator transition, revealing previously overlooked universal features characteristic of strongly correlated electron systems. Our scaling analysis, based on the Wigner-Mott theoretical viewpoint, conclusively demonstrates that the transition is driven by strong electron-electron interactions and not disorder, in striking resemblance to what is seen in other Mott systems. Our results provide compelling evidence that transition-metal dichalcogenides provide an ideal testing ground, and should open an exciting avenue for the study of strong correlation physics. | |
dc.identifier.doi | 10.1103/physrevb.102.245424 | |
dc.identifier.issn | 2469-9950 | |
dc.identifier.issn | 2469-9969 | |
dc.identifier.scopus | 2-s2.0-85099126385 | |
dc.identifier.uri | https://pub.ipb.ac.rs/handle/123456789/103 | |
dc.identifier.wos | 000602255300005 | |
dc.language.iso | en | |
dc.publisher | American Physical Society (APS) | |
dc.relation.ispartof | Physical Review B | |
dc.relation.ispartofabbr | Phys. Rev. B | |
dc.rights | restrictedAccess | |
dc.title | Quantum critical scaling for finite-temperature Mott-like metal-insulator crossover in few-layered MoS2 | |
dc.type | Article | |
dc.type.version | publishedVersion |
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