Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells

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dc.citation.issue8
dc.citation.rankM21
dc.citation.spage081119
dc.citation.volume102
dc.contributor.authorShashkin, Alexander A.
dc.contributor.authorMelnikov, Mikhail
dc.contributor.authorDolgopolov, Valeri
dc.contributor.authorRadonjić, Miloš
dc.contributor.authorDobrosavljević, Vladimir
dc.contributor.authorHuang, S.
dc.contributor.authorLiu, Chi-Wu
dc.contributor.authorZhu, Amy Y. X.
dc.contributor.authorKravchenko, Sergey
dc.date.accessioned2024-06-17T09:23:31Z
dc.date.available2024-06-17T09:23:31Z
dc.date.issued2020-08-26
dc.description.abstractWe observe that in a strongly interacting two-dimensional electron system in ultraclean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.
dc.identifier.doi10.1103/physrevb.102.081119
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.scopus2-s2.0-85091649734
dc.identifier.urihttps://pub.ipb.ac.rs/handle/123456789/108
dc.identifier.wos000562629600001
dc.language.isoen
dc.publisherAmerican Physical Society (APS)
dc.relation.ispartofPhysical Review B
dc.relation.ispartofabbrPhys. Rev. B
dc.rightsrestrictedAccess
dc.titleManifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells
dc.typeArticle
dc.type.versionpublishedVersion
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