Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells
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Date
2020-08-26
Journal Title
Journal ISSN
Volume Title
Journal Title
Physical Review B
Volume Title
102
Article Title
081119
Publisher
American Physical Society (APS)
Abstract
We observe that in a strongly interacting two-dimensional electron system in ultraclean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.